US Patent 7586782 Semiconductor memory
Patent 7586782 was granted and assigned to Renesas Technology Corp on September, 2009 by the United States Patent and Trademark Office.
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A phase-change memory for employing chalcogenide as a recording medium is disclosed, which prevents the read disturbance from being generated, and reads data at high speed. In a phase-change memory cell array including a selection transistor and chalcogenide, a substrate potential of the selection transistor is isolated in a direction perpendicular to the word lines. During the data recording, a forward current signal flows between the substrate and the source line connected to chalcogenide, and the selection transistor is not used. During the data reading, a desired cell is selected by the selection transistor. Therefore, a recording voltage is greatly higher than the reading voltage, such that the occurrence of read disturbance is prevented, and a high-speed operation is implemented.
US Patent 07586782 Semiconductor memory US Patent 7586782 Semiconductor memory
US Patent 07586782 Semiconductor memory
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