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US Patent 7466610 Non-volatile semiconductor memory device

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Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
74666100
Patent Inventor Names
Jin Kashiwagi0
Akira Umezawa0
Date of Patent
December 16, 2008
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Patent Application Number
116904200
Date Filed
March 23, 2007
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Patent Primary Examiner
‌
Michael T. Tran
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Patent abstract

A non-volatile semiconductor memory device comprises a redundant memory cell to store address data of a defect cell in a memory cell array. A first decoder circuit is given a first drive voltage to provide a control signal to the redundant memory cell. A dummy memory cell has a threshold voltage corresponding to the redundant memory cell. A second decoder circuit is given a second drive voltage corresponding to the first drive voltage to provide a control signal to the dummy memory cell. A comparator circuit compares data to be read out of the dummy memory cell with data actually read out of the dummy memory cell.

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