Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shinya Ito1
Date of Patent
February 5, 2008
1Patent Application Number
107633151
Date Filed
January 23, 2004
1Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device, includes (a) forming an oxide film entirely over a silicon substrate on which a MOS transistor is fabricated, (b) carrying out first thermal-annealing to the silicon substrate, (c) removing the oxide film in an area where later mentioned silicide is to be formed, (d) forming a metal film entirely over the silicide substrate, (e) carrying out second thermal-annealing to the silicon substrate to form silicide in the area, and (f) removing the metal film having been not reacted with the silicon substrate.
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