US Patent 7220654 Method for manufacturing semiconductor substrate

Patent 7220654 was granted and assigned to Denso on May, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Hiroaki Himi0

Noriyuki Iwamori0

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Patent abstract

An epitaxial layer is formed on a high-resistance semiconductor substrate containing interstitial oxygen at a high concentration, and then a heat treatment is performed to the semiconductor substrate at a high temperature in an oxidizing atmosphere. Accordingly, a stratiform region of SiO2 is formed by deposition at an interface between the epitaxial layer and the semiconductor substrate. As a result, an apparent SOI substrate for an SOI semiconductor device can be manufactured at a low cost.

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