Patent attributes
An RF device includes a first substrate having a lower relative dielectric constant, a first RF circuit for a lower frequency band provided in the first substrate, a second substrate having a higher relative dielectric constant larger than the lower relative dielectric constant, and a second RF circuit for a higher frequency band having a part of the second RF circuit sandwiched between the first substrate and the second substrate. The first RF circuit and the second RF circuit are connected to each other and the second substrate is partially overlaid on the first substrate. A semiconductor device or passive device is provided on a region in the surface of the first substrate on which the second substrate is not overlaid, and a multilayered wiring pattern made of copper or silver is formed in the first substrate to form the first RF circuit.
