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US Patent 12132124 Semiconductor by-pass switch

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
121321241
Patent Inventor Names
Marvin Motsenbocker1
Xu Ming1
Date of Patent
October 29, 2024
1
Patent Application Number
178241491
Date Filed
May 25, 2022
1
Patent Citations
‌
US Patent 6897543 Electrically-programmable integrated circuit antifuses
1
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US Patent 10492282 Resistive bypass for series lighting circuit
1
Patent Primary Examiner
‌
Jared Fureman
1
CPC Code
‌
H01L 29/2003
1
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H01L 29/417
1
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H01L 29/6606
1
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H01L 29/66204
1
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H01L 29/7397
1
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H01L 29/7803
1
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H01L 29/7804
1
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H01L 29/7808
1
...
Patent abstract

An anti-fuse having two electrical connections is constructed by adding at least one zener diode and resistor to a power MOSFET. When the voltage across the two electrical connections exceeds the zener diode voltage and the maximum gate voltage of the MOSFET, the MOSFET burns out. This shorts out the device which can be used to bypass an LED or other load when that load burns out and forms an open circuit.

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