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US Patent 11930648 3D memory devices and structures with metal layers

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 US Patent 11930648 3D memory devices and structures with metal layers

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Patent abstract

A semiconductor device including: a first level including first memory arrays, a plurality of first transistors, and a plurality of first metal layers; a second level disposed on top of the first level, where the second level includes second memory arrays; a third level disposed on top of the second level, where the third level includes a plurality of third transistors and a plurality of third metal layers, where the third level is bonded to the second level, where the bonded includes oxide to oxide bonding regions and a plurality of metal to metal bonding regions, where the first level includes first filled holes, where the second level includes second filled holes, where the second filled holes are aligned to the first filled holes with a more than 1 nm but less than 40 nm alignment error, and where the third level includes decoder circuits.

Infobox
Is a
Patent
Patent
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
119306481
Patent Inventor Names
Brian Cronquist1
Jin-Woo Han1
Zvi Or-Bach1
Date of Patent
March 12, 2024
1
Patent Application Number
183888401
Date Filed
November 12, 2023
1
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Patent Primary Examiner
‌
Mamadou L Diallo
1
CPC Code
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H01L 2224/08145
1
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H01L 25/50
1
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H01L 25/18
1
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H01L 25/0657
1
‌
H01L 24/80
1
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H01L 24/08
1
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H01L 2224/80896
1
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H01L 2224/80895
1
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H01L 2924/14511
1
‌
H01L 2924/1436
1
‌
H01L 2924/1431
1

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