US Patent 11791342 Varactor integrated with complementary metal-oxide semiconductor devices

A semiconductor FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region and a common metal contact for the first source/drain region and the second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.