Log in
Enquire now
‌

US Patent 11588069 Photovoltaic devices and method of making

Patent 11588069 was granted and assigned to First Solar on February, 2023 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors

Contents

TimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Applicant
First Solar
First Solar
1
Current Assignee
First Solar
First Solar
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
115880691
Date of Patent
February 21, 2023
1
Patent Application Number
174667081
Date Filed
September 3, 2021
1
Patent Citations
‌
US Patent 10243092 Photovoltaic device including a p-n junction and method of manufacturing
1
‌
US Patent 10062800 Photovoltaic devices and method of making
‌
US Patent 10141473 Photovoltaic devices and method of making
1
‌
US Patent 10461207 Photovoltaic devices and method of manufacturing
‌
US Patent 10529883 Photovoltaic devices and method of manufacturing
‌
US Patent 10784397 Photovoltaic devices and method of making
‌
US Patent 11164989 Photovoltaic devices and method of making
Patent Citations Received
‌
US Patent 11769844 Photovoltaic device including a p-n junction and method of manufacturing
‌
US Patent 12021163 Photovoltaic devices and methods of forming the same
7
‌
US Patent 12119416 Buffer layers for photovoltaic devices with group V doping
8
‌
US Patent 11876140 Photovoltaic devices and method of making
9
‌
US Patent 11843070 Photovoltaic devices including doped semiconductor films
10
‌
US Patent 11784278 Photovoltaic devices and method of making
Patent Primary Examiner
‌
Golam Mowla
1
CPC Code
‌
H01L 31/065
1
‌
H01L 31/1832
1
‌
H01L 31/022425
1
‌
H01L 31/1828
1
‌
H01L 31/02966
1
‌
H01L 31/073
1

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 11588069 Photovoltaic devices and method of making

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo

Company

  • Home
  • Press & Media
  • Blog
  • Careers
  • WE'RE HIRING

Products

  • Knowledge Graph
  • Query Tool
  • Data Requests
  • Knowledge Storage
  • API
  • Pricing
  • Enterprise
  • ChatGPT Plugin

Legal

  • Terms of Service
  • Enterprise Terms of Service
  • Privacy Policy

Help

  • Help center
  • API Documentation
  • Contact Us
By using this site, you agree to our Terms of Service.