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US Patent 11469310 Semiconductor device

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Patent
Patent

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Patent Applicant
SK Hynix
SK Hynix
Current Assignee
SK Hynix
SK Hynix
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11469310
Date of Patent
October 11, 2022
Patent Application Number
17095859
Date Filed
November 12, 2020
Patent Citations
‌
US Patent 10056393 Application of antiferroelectric like materials in non-volatile memory devices
‌
US Patent 10153155 Doped ferroelectric hafnium oxide film devices
Patent Primary Examiner
‌
Steven M Christopher

A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

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