Patent 10438650 was granted and assigned to Micron Technology on October, 2019 by the United States Patent and Trademark Office.
A memory device includes an internal storage unit configured to store mode data specifying an operating speed of the memory device; a control decoder coupled to the internal storage unit, the control decoder configured to generate a delay control signal based on the mode data; and an input buffer coupled to the control decoder, the input buffer configured to adjust a delay of an input signal based on the delay control signal.