William Shockley
American physicist and inventor
Is a
Academic Discipline
Citizenship
Birthdate
February 13, 1910
Date of Death
August 12, 1989
Doctoral Advisor
Founder of
Known for
Point-contact transistor and GJT Diffused-base transistor Heterojunction bipolar transistor Thyristor BARITT diode Shockley diode Junction theory BJT theory FET theory Deathnium Deep-level trap Deformation potential theory Empty lattice approximation Gradual channel approximation Lucky electron model Hot electron theory Channel length modulation Process variation Ion implantation Low-level injection Through-silicon via Transmission line measurement Shockley diode equation Shockley–Read–Hall recombination Shockley partials Shockley–Ramo theorem Shockley states Shockley–James paradox Shockley–Queisser limit Haynes–Shockley experiment Read–Shockley equation Van Roosbroeck– Shockley equation
Location
Birthplace
Place of Death
Wikidata ID
Find more people like William Shockley
Use the Golden Query Tool to discover related individuals, professionals, or experts with similar interests, expertise, or connections in the Knowledge Graph.
By using this site, you agree to our Terms of Service.