List of IceMos Technology patents

Patents where

Current Assignee

Name

IceMos Technology

Name	Description	Patent Applicant	Current Assignee	Patent Jurisdiction	Patent Number	Date of Patent
‌ US Patent 8963239 800 V superjunction device	Patent 8963239 was granted and assigned to IceMos Technology on February, 2015 by the United States Patent and Trademark Office.	IceMos Technology	IceMos Technology	United States Patent and Trademark Office	8963239	February 24, 2015
‌ US Patent 9461109 Method of forming superjunction high voltage devices using wafer bonding	Patent 9461109 was granted and assigned to IceMos Technology on October, 2016 by the United States Patent and Trademark Office.	IceMos Technology	IceMos Technology	United States Patent and Trademark Office	9461109	October 4, 2016
‌ US Patent 7601556 Front side electrical contact for photodetector array and method of making same	Patent 7601556 was granted and assigned to IceMos Technology on October, 2009 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7601556	October 13, 2009
‌ US Patent 7576404 Backlit photodiode and method of manufacturing a backlit photodiode	Patent 7576404 was granted and assigned to IceMos Technology on August, 2009 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7576404	August 18, 2009
‌ US Patent 7579273 Method of manufacturing a photodiode array with through-wafer vias	Patent 7579273 was granted and assigned to IceMos Technology on August, 2009 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7579273	August 25, 2009
‌ US Patent 7795045 Trench depth monitor for semiconductor manufacturing	Patent 7795045 was granted and assigned to IceMos Technology on September, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7795045	September 14, 2010
‌ US Patent 7553764 Silicon wafer having through-wafer vias	Patent 7553764 was granted and assigned to IceMos Technology on June, 2009 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7553764	June 30, 2009
‌ US Patent 8736019 Semiconductor devices with sealed, unlined trenches and methods of forming same	Patent 8736019 was granted and assigned to IceMos Technology on May, 2014 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	8736019	May 27, 2014
‌ US Patent 7560791 Front lit PIN/NIP diode having a continuous anode/cathode	Patent 7560791 was granted and assigned to IceMos Technology on July, 2009 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7560791	July 14, 2009
‌ US Patent 8946814 Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates	Patent 8946814 was granted and assigned to IceMos Technology on February, 2015 by the United States Patent and Trademark Office.	IceMos Technology	IceMos Technology	United States Patent and Trademark Office	8946814	February 3, 2015
‌ US Patent 7723172 Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material	Patent 7723172 was granted and assigned to IceMos Technology on May, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7723172	May 25, 2010
‌ US Patent 7821089 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes	Patent 7821089 was granted and assigned to IceMos Technology on October, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7821089	October 26, 2010
‌ US Patent 7709950 Silicon wafer having through-wafer vias	Patent 7709950 was granted and assigned to IceMos Technology on May, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7709950	May 4, 2010
‌ US Patent 7741141 Photodiode having increased proportion of light-sensitive area to light-insensitive area	Patent 7741141 was granted and assigned to IceMos Technology on June, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7741141	June 22, 2010
‌ US Patent 7768085 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes	Patent 7768085 was granted and assigned to IceMos Technology on August, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7768085	August 3, 2010
‌ US Patent 7999348 Technique for stable processing of thin/fragile substrates	Patent 7999348 was granted and assigned to IceMos Technology on August, 2011 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7999348	August 16, 2011
‌ US Patent 7846821 Multi-angle rotation for ion implantation of trenches in superjunction devices	Patent 7846821 was granted and assigned to IceMos Technology on December, 2010 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7846821	December 7, 2010
‌ US Patent 7972934 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes	Patent 7972934 was granted and assigned to IceMos Technology on July, 2011 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	7972934	July 5, 2011
‌ US Patent 8058091 Front lit PIN/NIP diode having a continuous anode/cathode	Patent 8058091 was granted and assigned to IceMos Technology on November, 2011 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	8058091	November 15, 2011
‌ US Patent 8169057 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode	Patent 8169057 was granted and assigned to IceMos Technology on May, 2012 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	8169057	May 1, 2012
‌ US Patent 8716829 Semiconductor devices with sealed, unlined trenches and methods of forming same	Patent 8716829 was granted and assigned to IceMos Technology on May, 2014 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	8716829	May 6, 2014
‌ US Patent 9576842 Grass removal in patterned cavity etching	Patent 9576842 was granted and assigned to IceMos Technology on February, 2017 by the United States Patent and Trademark Office.	IceMos Technology	IceMos Technology	United States Patent and Trademark Office	9576842	February 21, 2017
‌ US Patent 8012806 Multi-directional trenching of a die in manufacturing superjunction devices	Patent 8012806 was granted and assigned to IceMos Technology on September, 2011 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	8012806	September 6, 2011
‌ US Patent 8114751 Multi-angle rotation for ion implantation of trenches in superjunction devices	Patent 8114751 was granted and assigned to IceMos Technology on February, 2012 by the United States Patent and Trademark Office.		IceMos Technology	United States Patent and Trademark Office	8114751	February 14, 2012
‌ US Patent 9147751 Methods of manufacturing superjunction devices	Patent 9147751 was granted and assigned to IceMos Technology on September, 2015 by the United States Patent and Trademark Office.	IceMos Technology	IceMos Technology	United States Patent and Trademark Office	9147751	September 29, 2015

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