US Patent 10490567 Semiconductor device and method of manufacturing the same

The semiconductor device includes: a first channel pattern including a first horizontal part, vertical parts extending from the first horizontal part, a connection part extending from the first horizontal part in a direction opposite to the vertical parts, and a second horizontal part extending from the connection part in a direction parallel to the first horizontal part; a first gate stack enclosing the vertical parts of the first channel pattern and disposed over the first horizontal part; a well structure disposed under the second horizontal part, and including a first conductivity type impurity; and a first well contact line directly contacting with the second horizontal part and the well structure to couple the second horizontal part of the first channel pattern with the well structure.