SBIR/STTR Award attributes
This STTR will develop atomically precise fabrication and measurement technology that will enable a new experimental regime to study the physics of strongly correlated quantum systems.The fabrication techniques are based primarily on Hydrogen Depassivation Lithography (HDL) which uses Scanning Tunneling Microscope technology to create atomically precise patterns of H on a Si (100) 2x1 surface in a UHV environment.Shortly after patterning, phosphine is dosed on the surface where it sticks to the clean Si and nowhere else. A short anneal and low temp 28Si epitaxy buries the P donor dopants in the crystal plane they were deposited on. Extremely small and precise geometries each containing a controllable number of dopants in a 2D array will create tunable electronic states and, we believe, strongly correlated quantum systems.The technology to create and measure these designed 2D materials is only just emerging. We will significantly improve the accuracy and scale of the arrays, develop reliable electrical contacts to permit transport measurements, develop other dopant options including acceptors and donors, and develop transport and other measurement processes to explore the quantum nature of these devices. This commercialization will put these capabilities into the hands of many quantum researchers.
