Patent attributes
A multi-wavelength semiconductor diode laser device includes a semiconductor diode gain medium including one or more quantum well structures, each of the quantum well structures having an associated gain peak, the semiconductor gain medium further including a back facet configured for high reflection of laser light therein and a front facet configured for coupling a laser beam therefrom, one or more collimation optics configured to receive the laser beam, and an external volume Bragg grating configured to reflect a portion of the laser beam and narrow the wavelength of at least a portion of the light generated by the semiconductor gain medium to a selected wavelength corresponding to at least one of the gain peaks, wherein an output beam is coupled out of the external volume Bragg grating, the output beam having a plurality of output wavelengths.
