Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Erdem Arkun0
Rytis Dargis0
Robin Smith0
Andrew Clark0
Michael Lebby0
Date of Patent
January 12, 2016
0Patent Application Number
139397210
Date Filed
July 11, 2013
0Patent Primary Examiner
Patent abstract
A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
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