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US Patent 9202868 Process for fabricating nanowire arrays

Patent 9202868 was granted and assigned to Advanced Silicon Group on December, 2015 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Patent Applicant
Advanced Silicon Group
Advanced Silicon Group
Current Assignee
Advanced Silicon Group
Advanced Silicon Group
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9202868
Date of Patent
December 1, 2015
Patent Application Number
14444361
Date Filed
July 28, 2014
Patent Primary Examiner
‌
Selim Ahmed
Patent abstract

A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

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