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US Patent 8669467 Thin absorber layer of a photovoltaic device

Patent 8669467 was granted and assigned to Alta Devices on March, 2014 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
Alta Devices
Alta Devices
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8669467
Patent Inventor Names
Gregg Higashi0
Isik C. Kizilyalli0
Harry Atwater0
Thomas J. Gmitter0
Melissa J. Archer0
Andreas G. Hegedus0
Gang He0
Date of Patent
March 11, 2014
Patent Application Number
12940918
Date Filed
November 5, 2010
Patent Primary Examiner
‌
Alexander Kollias
Patent abstract

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

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