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US Patent 8106381 Semiconductor structures with rare-earths

Patent 8106381 was granted and assigned to Translucent Inc. on January, 2012 by the United States Patent and Trademark Office.

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Current Assignee
Translucent Inc.
Translucent Inc.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
81063810
Patent Inventor Names
Petar B. Atanackovic0
Date of Patent
January 31, 2012
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Patent Application Number
118733870
Date Filed
October 16, 2007
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Patent Citations Received
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US Patent 11978632 Semiconductor device including a semiconductor fin comprising a silicon germanium portion and an isolation structure at a sidewall of the silicon germanium portion
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US Patent 11996291 Method for manufacturing semiconductor device including annealing a germanium layer to diffuse germanium atoms into a silicon substrate
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Patent Primary Examiner
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Zandra Smith
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Patent abstract

The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations.

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