US Patent 7894256 Thyristor based memory cell

A new memory cell contains only a single thyristor without the need to include an access transistor. A memory array containing these memory cells can be fabricated on bulk silicon wafer. The memory cell contains a thyristor body and a gate. The thyristor body has two end region and two base regions, and it is disposed on top of a well. The memory cell is positioned between two isolation regions, and the isolation regions are extended below the well. A first end region is connected to one of a word line, a bit line and a third line. A second end region is connected to another of the word line, bit line, and third line. The gate is connected to the remaining of the word line, bit line and third line.