Patent attributes
A gas-sensing semiconductor device 1′ is fabricated on a silicon substrate 2′ having a thin silicon dioxide insulating layer 3′ in which a resistive heater 6 made of doped single crystal silicon formed simultaneously with source and drain regions of CMOS circuitry is embedded. The device 1′ includes a sensing area provided with a gas-sensitive layer 9′ separated from the heater 6′ by an insulating layer 4′. As one of the final fabrication steps, the substrate 2′ is back-etched so as to form a thin membrane in the sensing area. The heater 6′ has a generally circular-shaped structure surrounding a heat spreading plate 16′, and consists of two sets 20′, 21′ of meandering resistors having arcuate portions nested within one another and interconnected in labyrinthine form. The fabrication of the heater at the same time as the source and drain regions of CMOS circuitry is particularly advantageous in that the gas-sensing semiconductor device is produced without requiring any fabrication steps in addition to those already employed in the IC processing apart from a post-CMOS back etch and deposition of the gas-sensitive layer. The circular design is advantageous in that it is the best solution to minimise the size of the membrane at fixed power loss and heated area.
