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US Patent 7483513 Measurement of properties of thin films on sidewalls

Patent 7483513 was granted and assigned to Jordan Valley Semiconductors on January, 2009 by the United States Patent and Trademark Office.

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Current Assignee
Jordan Valley Semiconductors
Jordan Valley Semiconductors
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
74835130
Patent Inventor Names
Isaac Mazor0
Boris Yokhin0
Date of Patent
January 27, 2009
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Patent Application Number
114874330
Date Filed
July 17, 2006
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Patent Citations Received
‌
US Patent 11781999 Spot-size control in reflection-based and scatterometry-based X-ray metrology systems
Patent Primary Examiner
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Courtney Thomas
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Patent abstract

A method for X-ray analysis of a sample includes directing a beam of X-rays to impinge on an area of a periodic feature on a surface of the sample and receiving the X-rays scattered from the surface in a reflection mode so as to detect a spectrum of diffraction in the scattered X-rays as a function of azimuth. The spectrum of diffraction is analyzed in order to determine a dimension of the feature.

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