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US Patent 7338869 Semiconductor device and its manufacturing method

Patent 7338869 was granted and assigned to National Institute of Advanced Industrial Science and Technology on March, 2008 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
National Institute of Advanced Industrial Science and Technology
National Institute of Advanced Industrial Science and Technology
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Date Filed
June 26, 2003
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Date of Patent
March 4, 2008
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Patent Application Number
10517772
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Patent Citations Received
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US Patent 11784243 Oxide-nitride-oxide stack having multiple oxynitride layers
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US Patent 12009401 Memory transistor with multiple charge storing layers and a high work function gate electrode
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Patent Inventor Names
Junji Senzaki
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Kenji Fukuda
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
7338869
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Patent Primary Examiner
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Walter Lindsay, Jr.
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