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US Patent 7297637 Use of pulsed grounding source in a plasma reactor

Patent 7297637 was granted and assigned to Micron Technology on November, 2007 by the United States Patent and Trademark Office.

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Patent
Patent

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Current Assignee
Micron Technology
Micron Technology
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7297637
Date of Patent
November 20, 2007
Patent Application Number
10219436
Date Filed
August 14, 2002
Patent Citations Received
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US Patent 11887812 Bias supply with a single controlled switch
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US Patent 11978613 Transition control in a bias supply
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US Patent 11942309 Bias supply with resonant switching
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US Patent 12125674 Surface charge and power feedback and control using a switch mode bias system
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0
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US Patent 11670487 Bias supply control and data processing
0
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US Patent 11842884 Spatial monitoring and control of plasma processing environments
0
Patent Primary Examiner
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Lan Vinh
Patent abstract

A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

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