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US Patent 12132308 Electrostatic protection circuit

Patent 12132308 was granted and assigned to ChangXin Memory Technologies on October, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Applicant
ChangXin Memory Technologies
ChangXin Memory Technologies
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Current Assignee
ChangXin Memory Technologies
ChangXin Memory Technologies
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
121323080
Patent Inventor Names
Qian Xu0
Zhan Xue0
Date of Patent
October 29, 2024
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Patent Application Number
178985350
Date Filed
August 30, 2022
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Patent Citations
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US Patent 10897131 Electrostatic discharge protection circuit for bypassing an ESD current
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US Patent 7102862 Electrostatic discharge protection circuit
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US Patent 8009396 Method and apparatus for ESD protection
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US Patent 10177135 Integrated circuit and electrostatic discharge protection circuit thereof
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US Patent 10186860 Electrostatic discharge device with fail-safe design
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US Patent 11088541 Integrated circuit and electrostatic discharge protection circuit thereof
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Patent Primary Examiner
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Dharti H Patel
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CPC Code
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H02H 1/0007
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H02H 9/046
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Patent abstract

An electrostatic protection circuit includes: a monitoring circuit configured to generate a trigger signal in response to an electrostatic pulse being present on the power supply pad; a discharge transistor connected between the power supply pad and the ground pad and configured to be turned on under control of the trigger signal and discharge electrostatic discharging charges to the ground pad; and a delay circuit having an input terminal connected to an output terminal of the monitoring circuit, and an output terminal connected to a control terminal of the discharge transistor, where the delay circuit is configured to perform delay processing on the electrostatic protection circuit in a first state and turn off the discharge transistor in a second state.

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