US Patent 11296503 Electrostatic discharge protection circuits and semiconductor circuits

An electrostatic discharge protection (ESD) circuit is provided for a semiconductor element. The semiconductor element includes first and second drain/source electrodes and is surrounded by a deep well region. The ESD circuit includes a first control circuit and a first discharge circuit. The first control circuit is electrically connected between the first drain/source electrode and a power terminal and includes a first control terminal electrically connected to the deep well region and generates a first control signal. The first discharge circuit is controlled by the first control signal. When an electrostatic discharge event occurs on the first drain/source electrode, the first control circuit generates the first control signal according to potential states of the deep well region and the first drain/source electrode, and the first discharge circuit provides a first discharge path between the first drain/source electrode and the power terminal according to the first control signal.