Patent attributes
A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.
