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US Patent 10886105 Impedance matching method, impedance matching device and plasma generating apparatus

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
108861050
Patent Inventor Names
Jing Yang0
Gang Wei0
Jing Wei0
Date of Patent
January 5, 2021
0
Patent Application Number
166208410
Date Filed
May 21, 2018
0
Patent Citations
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US Patent 10643822 Impedance matching method and device for pulsed radio frequency power supply
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US Patent 10679825 Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
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US Patent 10269540 Impedance matching system and method of operating the same
0
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US Patent 10546724 Pulsed, bidirectional radio frequency source/load
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US Patent 10573494 Multi-level parameter and frequency pulsing with a low angular spread
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US Patent 10580618 Multi-level pulsing of DC and RF signals
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US Patent 10607813 Synchronized pulsing of plasma processing source and substrate bias
Patent Citations Received
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US Patent 11266004 Plasma generation device including matching device, and impedance matching method
Patent Primary Examiner
‌
Amy Cohen Johnson
0
Patent abstract

The present disclosure provides an impedance matching method, an impedance matching device and a plasma generating device. The impedance matching method is implemented for matching an impedance of a load connected to an RF source to an impedance of the RF source, including: selectively performing an automatic matching step or a frequency scan matching step according to an operation mode of the RF source, wherein: in the automatic matching step, instructing a motor to drive an impedance matching network to provide a certain impedance; and in the frequency scan matching step, instructing the motor to stop driving and the RF source to perform a frequency scanning operation. According to the embodiments of the present disclosure, a phenomenon of unstable and non-repetitive matching caused by fast impedance changing during the impedance matching process can be effectively avoided, and a large processing window and process stability can be implemented.

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