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US Patent 10381519 Light emitting device package and lighting apparatus

Patent 10381519 was granted and assigned to LG on August, 2019 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
LG
LG
Current Assignee
LG
LG
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10381519
Patent Inventor Names
Bum Jin Yim0
Hoe Jun Kim0
Jae Won Seo0
Jun Hee Hong0
Date of Patent
August 13, 2019
Patent Application Number
15550955
Date Filed
March 16, 2016
Patent Citations Received
‌
US Patent 11257798 Light emitting diode for display and display apparatus having the same
‌
US Patent 11522008 Display device having light emitting stacked structure
0
‌
US Patent 11522006 Light emitting stacked structure and display device having the same
‌
US Patent 11289461 Light emitting device with LED stack for display and display apparatus having the same
‌
US Patent 11756984 Light emitting stacked structure and display device having the same
‌
US Patent 11355482 Light emitting diode for display and display apparatus having the same
‌
US Patent 11804512 Light emitting stacked structure and display device having the same
‌
US Patent 11804511 Light emitting device with LED stack for display and display apparatus having the same
...
Patent Primary Examiner
‌
Cuong B Nguyen
Patent abstract

A light emitting device package, according to an embodiment, includes: a substrate; a light emitting structure that is disposed below the substrate and includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first bonding pad connected with the first conductive type semiconductor layer while being embedded in a through-hole exposed the first conductive type semiconductor layer by passing through the active layer and the second conductive type semiconductor layer; a second bonding pad that is disposed below the second conductive type semiconductor layer while being spaced apart from the first bonding pad and is connected with the second conductive type semiconductor layer; a first insulation layer disposed on the lateral portion of the light emitting structure in the through-hole and on the lower inner edge of the light emitting structure; and a second insulation layer disposed between the first insulation layer and the first bonding pad in the through-hole.

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