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US Patent 10177137 Electrostatic discharge protection apparatus

Patent 10177137 was granted and assigned to MStar Semiconductor on January, 2019 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
MStar Semiconductor
MStar Semiconductor
Current Assignee
MStar Semiconductor
MStar Semiconductor
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10177137
Patent Inventor Names
Federico Agustin Altolaguirre0
Po-Ya Lai0
Yen-Hung Yeh0
Date of Patent
January 8, 2019
Patent Application Number
15891586
Date Filed
February 8, 2018
Patent Citations Received
‌
US Patent 11837866 ESD protection apparatus and control method
0
‌
US Patent 12009657 ESD clamp circuit for low leakage applications
0
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US Patent 11842995 ESD protection circuit and semiconductor device
0
‌
US Patent 11552470 Electrostatic discharge circuit
0
‌
US Patent 10700516 Electrostatic discharge protection circuit
Patent Primary Examiner
‌
Joseph Schoenholtz
Patent abstract

An electrostatic discharge (ESD) protection apparatus is provided. A first power rail provides first reference voltage. A second power rail provides a second reference voltage. A detection circuit generates a detection result according to whether ESD stress occurs on the first power rail. A first N-type MOSFET has its gate serving as a control terminal. A second N-type MOSFET has its gate serving as a second control node. An intermediate power rail provides an intermediate voltage between the first and the second reference voltages. A first switching circuit couples the first control node to the intermediate power rail or to the first power rail according to the detection result. A second switching circuit couples the second control node to the second power rail or to the first control node according to the detection result.

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