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US Patent 10170666 LED light source module and display device

Patent 10170666 was granted and assigned to Samsung on January, 2019 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Samsung
Samsung
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Current Assignee
Samsung
Samsung
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
101706660
Patent Inventor Names
Sung Hyun Sim0
Young Soo Park0
Hanul Yoo0
Nam Goo Cha0
Yong Il Kim0
Date of Patent
January 1, 2019
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Patent Application Number
153898080
Date Filed
December 23, 2016
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Patent Citations
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US Patent 10043850 HV-LED module having 3D light-emitting structure and manufacturing method thereof
Patent Citations Received
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US Patent 12125941 Light emitting device for display and display apparatus having the same
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US Patent 11476298 Light emitting diode (LED) stack for a display
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US Patent 11489003 Light emitting stacked structure and display device having the same
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US Patent 11502230 Light emitting device
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US Patent 11978759 Light emitting diode (LED) stack for a display
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US Patent 12009384 Light emitting diode (LED) stack for a display
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US Patent 12009466 Light emitting device
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US Patent 12021111 Light emitting diode stack including hydrophilic material layer
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...
Patent Primary Examiner
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Stephen G Sherman
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Patent abstract

An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

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