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Radiation Monitoring Devices, Inc. SBIR Phase I Award, February 2022

A SBIR Phase I contract was awarded to Radiation Monitoring Devices, Inc. in February, 2022 for $199,981.0 USD from the U.S. Department of Energy.

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Contents

sbir.gov/node/2232845
Is a
SBIR/STTR Awards
SBIR/STTR Awards

SBIR/STTR Award attributes

SBIR/STTR Award Recipient
Radiation Monitoring Devices, Inc.
Radiation Monitoring Devices, Inc.
0
Government Agency
U.S. Department of Energy
U.S. Department of Energy
0
Award Type
SBIR0
Contract Number (US Government)
DE-SC00224370
Award Phase
Phase I0
Award Amount (USD)
199,9810
Date Awarded
February 14, 2022
0
End Date
November 13, 2022
0
Abstract

Single-crystalline chemical vapor deposition diamond meets a majority of the radiation tolerance and performance parameters needed to survive in extreme environments, such as measuring isotopes from heavy ion beams near zero degrees. All semiconductor materials degrade under these conditions, yet the excellent resolution of semiconductor detectors is required to enable the separation of isotopes. The major limiting factor for diamond is the cost, since it requires periodic replacement under extreme conditions. The cost for diamond is a reflection on the market for the semiconductor and the fabrication costs. By using a material such as GaN, SiC, or AlN, which have established markets for transistors and diodes, the production of sensors can be made at scale. Recent advances in the production of GaN substrate wafers and epitaxial growth provides a means to produce a solid-state charged particle detector at a low cost, while including additional features, such as an avalanche multiplication region to enhance signal to noise. Silicon avalanche photodiodes have been shown to provide both better spectroscopic and timing resolution compared to silicon drift (unity gain, surface barrier) detectors without internal avalanche multiplication. The growth of diamond is not mature enough to enable doped structures at low costs, such as what is achievable with a GaN epitaxy grown using chemical vapor deposition. Dual-sided growth on a GaN substrate with GaN avalanche and high conductive layers will provide a high performance solid- state detector. Though GaN is a leading candidate, other materials that may provide a lower cost alternative, and a material will be selected for the research effort. Within the Phase-I effort, we will design, simulate, and fabricate a prototype detector. Advancing the technology to demonstrate feasibility, we plan to demonstrate an energy resolution of less than 2% using alpha particles and a time resolution of less than 500 ps. Along with physics instrumentation, the solid-state detectors are used for nuclear instruments in a myriad of industries. The technology to be developed in the project will support applications where the detectors will be exposed to high radiation fields or accumulated doses, such as those found in the nuclear industry, sciences, medicine, and space applications.

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