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US Patent 9997530 Three-dimensional semiconductor memory device and method of fabricating the same

Patent 9997530 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on June, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
May 11, 2015
Date of Patent
June 12, 2018
Patent Application Number
14708477
Patent Citations Received
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US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12094892 3D micro display device and structure
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
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US Patent 11711928 3D memory devices and structures with control circuits
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US Patent 11763864 3D memory semiconductor devices and structures with bit-line pillars
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US Patent 11784169 3D semiconductor device and structure with metal layers
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US Patent 11784082 3D semiconductor device and structure with bonding
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US Patent 11804396 Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
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US Patent 11854857 Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9997530
Patent Primary Examiner
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Lex Malsawma

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