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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Date Filed
March 31, 2015
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Date of Patent
March 28, 2017
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Patent Application Number
14675215
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Patent Citations Received
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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12131955 Gate structures for semiconductor devices
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US Patent 12132092 Backside vias in semiconductor device
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US Patent 12132112 Work function control in gate structures
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US Patent 12132050 Semiconductor structure cutting process and structures formed thereby
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US Patent 12132115 Semiconductor device structure with dielectric stressor
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US Patent 12132118 Semiconductor device having a multilayer source/drain region and methods of manufacture
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US Patent 12132091 Work function layers for transistor gate electrodes
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US Patent 12132100 Profile control in forming epitaxy regions for transistors
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US Patent 11658245 Semiconductor device and method of manufacturing
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•••
Patent Inventor Names
Chih-Hao Wang
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Kuo-Cheng Ching
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Ying-Keung Leung
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Chi-Wen Liu
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Ching-Wei Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9608116
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Patent Primary Examiner
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Jami M Valentine
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