Log in
Enquire now
‌

US Patent 9570551 Replacement III-V or germanium nanowires by unilateral confined epitaxial growth

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Date Filed
February 5, 2016
Date of Patent
February 14, 2017
Patent Application Number
15016875
Patent Citations Received
‌
US Patent 12119404 Gate all around structure with additional silicon layer and method for forming the same
0
‌
US Patent 11705337 Tungsten defluorination by high pressure treatment
0
‌
US Patent 11749555 Semiconductor processing system
‌
US Patent 11756803 Gas delivery system for high pressure processing chamber
‌
US Patent 11765878 Semiconductor device including a layer between a source/drain region and a substrate
‌
US Patent 11855151 Multi-gate device and method of fabrication thereof
0
‌
US Patent 11881411 High pressure annealing process for metal containing materials
0
‌
US Patent 11990530 Replacement-channel fabrication of III-V nanosheet devices
0
Patent Inventor Names
Karthik Balakrishnan
0
Kangguo Cheng
0
Pouya Hashemi
0
Alexander Reznicek
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9570551
Patent Primary Examiner
‌
Mohammad Islam

Find more entities like US Patent 9570551 Replacement III-V or germanium nanowires by unilateral confined epitaxial growth

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo
By using this site, you agree to our Terms of Service.