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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Date Filed
November 4, 2015
Date of Patent
November 22, 2016
Patent Application Number
14932777
Patent Citations Received
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US Patent 12132118 Semiconductor device having a multilayer source/drain region and methods of manufacture
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US Patent 12113116 Semiconductor device and manufacturing method thereof
0
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US Patent 12119391 Fin-based semiconductor device structure including self-aligned contacts and method for forming the same
0
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US Patent 12119394 Method of manufacturing a semiconductor device and a semiconductor device
0
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US Patent 12119404 Gate all around structure with additional silicon layer and method for forming the same
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US Patent 12125848 Semiconductor device structure incorporating air gap
0
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US Patent 12132092 Backside vias in semiconductor device
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US Patent 12132115 Semiconductor device structure with dielectric stressor
0
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US Patent 11658245 Semiconductor device and method of manufacturing
0
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US Patent 11664454 Method for forming semiconductor device structure
0
•••
Patent Inventor Names
Ching-Hong Jiang
0
Shih-Chiang Chen
0
Teng-Chun Tsai
0
Li-Ting Wang
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9502265
Patent Primary Examiner
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David Nhu

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