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US Patent 9412828 Aligned gate-all-around structure

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Date Filed
April 10, 2015
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Date of Patent
August 9, 2016
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Patent Application Number
14683877
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Patent Citations Received
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US Patent 12132118 Semiconductor device having a multilayer source/drain region and methods of manufacture
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US Patent 12113116 Semiconductor device and manufacturing method thereof
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US Patent 12119391 Fin-based semiconductor device structure including self-aligned contacts and method for forming the same
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US Patent 12119404 Gate all around structure with additional silicon layer and method for forming the same
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US Patent 12125848 Semiconductor device structure incorporating air gap
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US Patent 12132092 Backside vias in semiconductor device
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US Patent 12132115 Semiconductor device structure with dielectric stressor
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US Patent 11658245 Semiconductor device and method of manufacturing
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US Patent 11664454 Method for forming semiconductor device structure
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US Patent 11664378 Semiconductor device structure and methods of forming the same
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•••
Patent Inventor Names
Kuo-Cheng Ching
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Zhiqiang Wu
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Jean-Pierre Colinge
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9412828
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Patent Primary Examiner
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Jermone Jackson, Jr.
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