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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Date Filed
February 9, 2012
Date of Patent
January 12, 2016
Patent Application Number
13369818
Patent Citations Received
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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12133390 Memory array
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US Patent 12136570 Graphene layer for low resistance contacts and damascene interconnects
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US Patent 12136566 Semiconductor device and method of manufacture
0
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US Patent 11705372 Fin loss prevention
0
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US Patent 11705508 Single fin structures
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US Patent 11705371 Semiconductor devices having merged source/drain features and methods of fabrication thereof
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US Patent 11705507 Semiconductor device and forming method thereof
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US Patent 11705491 Etch profile control of gate contact opening
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US Patent 11710665 Semiconductor device and method of manufacture
0
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9236267
Patent Primary Examiner
‌
Bac Au

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