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US Patent 9093530 Fin structure of FinFET

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Date Filed
December 28, 2012
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Date of Patent
July 28, 2015
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Patent Application Number
13730518
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Patent Citations Received
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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12135499 Reticle enclosure for lithography systems
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US Patent 12135502 Resin, photoresist composition, and method of manufacturing semiconductor device
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US Patent 12134690 Photoresist composition and method of manufacturing a semiconductor device
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US Patent 11656553 Method for forming semiconductor structure
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US Patent 11656544 Robust, high transmission pellicle for extreme ultraviolet lithography systems
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US Patent 11664213 Bevel edge removal methods, tools, and systems
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US Patent 11662656 Mask and method of forming the same
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US Patent 11662660 Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same
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US Patent 11670590 Chip structure with etch stop layer and method for forming the same
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9093530
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Patent Primary Examiner
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Andy Huynh
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