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US Patent 8816444 System and methods for converting planar design to FinFET design

Patent 8816444 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2014 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8816444

Patent Inventor Names

Ting-Chu Ko0

Chung-Hsien Chen0

Clement Hsingjen Wann0

Ming-Feng Shieh0

Yi-Tang Lin0

Chih-Sheng Chang0

Date of Patent

August 26, 2014

Patent Application Number

13416862

Date Filed

March 9, 2012

Patent Citations Received

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US Patent 12133390 Memory array

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US Patent 12087861 FinFETs and methods of forming FinFETs

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US Patent 12089414 Memory device and method of forming the same

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US Patent 12107012 Method for forming fin field effect transistor device structure

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US Patent 12112989 Semiconductor device with tunable epitaxy structures and method of forming the same

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US Patent 12119345 Semiconductor structure and method for forming the same

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US Patent 12125851 FinFET device and method of forming the same

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US Patent 12125912 Semiconductor device structure and method for forming the same preliminary class

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Patent Primary Examiner

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Amar Movva

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