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US Patent 8816444 System and methods for converting planar design to FinFET design

Patent 8816444 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2014 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8816444

Patent Inventor Names

Ting-Chu Ko0

Chung-Hsien Chen0

Clement Hsingjen Wann0

Ming-Feng Shieh0

Yi-Tang Lin0

Chih-Sheng Chang0

Date of Patent

August 26, 2014

Patent Application Number

13416862

Date Filed

March 9, 2012

Patent Citations Received

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US Patent 12112989 Semiconductor device with tunable epitaxy structures and method of forming the same

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US Patent 12068197 Methods for forming contact plugs with reduced corrosion

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US Patent 12074063 Contact formation method and related structure

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US Patent 12074218 Contact structure with insulating cap

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US Patent 12080593 Barrier-less structures

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US Patent 12080769 Contact structure with silicide and method for forming the same

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US Patent 12087834 Semiconductor structure

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US Patent 12087861 FinFETs and methods of forming FinFETs

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Patent Primary Examiner

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Amar Movva

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