Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 13, 2012
Patent Application Number
13237546
Date Filed
September 20, 2011
Patent Primary Examiner
Patent abstract
Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.