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US Patent 7827660 Bimorphic structures, sensor structures formed therewith, and methods therefor

Patent 7827660 was granted and assigned to Evigia Systems on November, 2010 by the United States Patent and Trademark Office.

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Patent
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Current Assignee
Evigia Systems
Evigia Systems
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
78276600
Patent Inventor Names
Bishnu Prasanna Gogoi0
Navid Yazdi0
Date of Patent
November 9, 2010
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Patent Application Number
121827130
Date Filed
July 30, 2008
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Patent Primary Examiner
Derris H. Banks
Derris H. Banks
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Patent abstract

A bimorphic structure responsive to changes in an environmental condition, sensor structures incorporating one or more of such bimorphic structures, and a method of forming such bimorphic structures. The sensor structure has an electrically-conductive first contact on a substrate, and a bimorph beam anchored to the substrate so that a portion thereof is suspended above the first contact. The bimorph beam has a multilayer structure that includes first and second layers, with the second layer between the first layer and the substrate. A portion of the first layer projects through an opening in the second layer toward the first contact so as to define an electrically-conductive second contact located on the beam so as to be spaced apart and aligned with the first contact for contact with the first contact when the beam sufficiently deflects toward the substrate.

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