Patent attributes
A CMOS solid state imaging device is capable of achieving a higher image quality while reducing the size and power consumption and increasing the number of pixels and speeds. According to the invention, in a CMOS solid state imaging device, including a light-receiving portion (11) that performs photoelectric conversion according to a quantity of received light, a transfer gate (12a) used to read out charges obtained through the photoelectric conversion in the light-receiving portion (11), and a peripheral transistor provided in a periphery of the light-receiving portion (11), and a driving method of the same, a voltage applied to the transfer gate (12a) is set higher than a voltage applied to the peripheral transistor.