Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 14, 2008
Patent Application Number
11646274
Date Filed
December 28, 2006
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
In a semiconductor device including a monocrystalline thin film transistor 16a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer 100 so as to create a field oxide film (SiO2 film) 104, and a marker 107 is formed on the field oxide film 104. With this structure, alignment of components may be performed based on a gate electrode 106 upon or after the transfer step.
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