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US Patent 12125848 Semiconductor device structure incorporating air gap

Patent 12125848 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
April 10, 2023
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Date of Patent
October 22, 2024
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
18132924
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Patent Citations
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9209247 Self-aligned wrapped-around structure
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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Patent Inventor Names
Wen-Yuan Chen
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Chung-Wei Wu
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Jon-Hsu Ho
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Wen-Hsing Hsieh
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Kuan-Lun Cheng
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Zhi-Qiang Wu
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Chun-Chung Su
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Chih-Ching Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12125848
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Patent Primary Examiner
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Sonya McCall-Shepard
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CPC Code
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H01L 21/823814
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H01L 29/41783
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H01L 21/823418
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H01L 29/7845
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H01L 29/806
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H01L 29/7839
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H01L 21/823481
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H01L 21/764
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H01L 29/66553
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H01L 29/6653
0

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