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US Patent 12074206 Integrated circuit device with improved reliability

Patent 12074206 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors

Is a

Patent

Current Assignee

Taiwan Semiconductor Manufacturing Company

Date Filed

August 30, 2021

Date of Patent

August 27, 2024

Patent Applicant

Taiwan Semiconductor Manufacturing Company

Patent Application Number

17461499

Patent Citations

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US Patent 10157799 Multi-gate device and method of fabrication thereof

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US Patent 10199502 Structure of S/D contact and method of making same

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US Patent 10475902 Spacers for nanowire-based integrated circuit device and method of fabricating same

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US Patent 10290546 Threshold voltage adjustment for a gate-all-around semiconductor structure

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US Patent 9818872 Multi-gate device and method of fabrication thereof

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US Patent 9887269 Multi-gate device and method of fabrication thereof

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US Patent 9899398 Non-volatile memory device having nanocrystal floating gate and method of fabricating same

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US Patent 10032627 Method for forming stacked nanowire transistors

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US Patent 10109721 Horizontal gate-all-around device having wrapped-around source and drain

Patent Inventor Names

Chia-Wei Chen

Shan-Mei Liao

Jian-Hao Chen

Cheng-Hao Hou

Tsung-Da Lin

Huang-Chin Chen

Yen-Ming Chen

Shih-Hao Lin

Cheng Hong Yang

Da-Yuan Lee

•••

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

12074206

Patent Primary Examiner

CPC Code

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