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US Patent 11923654 Laser integration techniques

Patent 11923654 was granted and assigned to Apple (company) on March, 2024 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Apple (company)
Apple (company)
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Current Assignee
Apple (company)
Apple (company)
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119236540
Patent Inventor Names
Alex Goldis0
Jason Pelc0
Michael J. Bishop0
Vijay M. Iyer0
Date of Patent
March 5, 2024
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Patent Application Number
175193550
Date Filed
November 4, 2021
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Patent Citations
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US Patent 7106778 Tuneable laser
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US Patent 7130325 Sampled grating distributed feedback wavelength tunable semiconductor laser integrated with sampled grating distributed Bragg reflector
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US Patent 7184064 Touch-screen image scrolling system and method
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US Patent 7189011 Optoelectronic assembly
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US Patent 7196355 Integrated thermal sensor for optoelectronic modules
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US Patent 7283242 Optical spectroscopy apparatus and method for measurement of analyte concentrations or other such species in a specimen employing a semiconductor laser-pumped, small-cavity fiber laser
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US Patent 7468637 Batch-fabricated, RF-interrogated, end transition, chip-scale atomic clock
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US Patent 7469092 Method and apparatus for the monitoring and control of a process
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Patent Primary Examiner
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Jay C Chang
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CPC Code
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G02B 2006/12135
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G02B 6/13
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H01S 5/02345
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H01S 5/02355
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Patent abstract

Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.

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