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US Patent 11853870 Photonic semiconductor devices and methods for manufacturing the same

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
118538700
Patent Inventor Names
Jinghui Zou0
Yichen Shen0
Huaiyu Meng0
Yanfei Bai0
Zhan Su0
Date of Patent
December 26, 2023
0
Patent Application Number
177272230
Date Filed
April 22, 2022
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Patent Citations
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US Patent 10268232 Apparatus and methods for optical neural network
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US Patent 10877229 Edge coupling through unetched surface of photonic chip
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US Patent 10514509 Method and apparatus for optical waveguide-to-semiconductor coupling and optical vias for monolithically integrated electronic and photonic circuits
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US Patent 11163120 Fiber attach enabled wafer level fanout
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US Patent 9377587 Fiber optic coupler array
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US Patent 9715064 Multi-chip modules with vertically aligned grating couplers for transmission of light signals between optical waveguides
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Patent Primary Examiner
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Rhonda S Peace
0
Patent abstract

A manufacturing method for a photonic device includes dividing a target photonic network, which is a photonic network configured for the photonic semiconductor device, into a plurality of sub-photonic networks, forming the plurality of sub-photonic networks on a plurality of photonic chips, and connecting the plurality of sub-photonic networks on the plurality of photonic chips through a coupler to obtain the photonic semiconductor device carrying the target photonic network, wherein the coupler is configured to couple light from one photonic chip to another photonic chip. Compared with the scale of the photonic network of the existing photonic semiconductor device, which is limited due to the footprint limitation of a single chip, the scale of the photonic network of the photonic semiconductor device is increased several times.

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