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US Patent 11682588 Epitaxial source/drain and methods of forming same

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
0
Date Filed
June 14, 2021
0
Date of Patent
June 20, 2023
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Patent Application Number
17347281
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Patent Citations
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US Patent 9093530 Fin structure of FinFET
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
0
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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US Patent 8963258 FinFET with bottom SiGe layer in source/drain
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11682588
0
Patent Primary Examiner
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Evren Seven
0

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